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  • Gate Driver Board for 3rd Generation (C3M™) Silicon Carbide MOSFETs

Gate Driver Board for 3rd Generation (C3M™) Silicon Carbide MOSFETs

CGD15SG00D2
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Features:

  • Supports 650 V and 1200 V (C3M™) Silicon Carbide MOSFETs
  • Gate driver output voltage = +15 V(max) / -3.3 V(min)
  • Low capacitance LLC isolated power supply
  • High Creepage (8mm) clearance
  • Resistor network allows user friendly optimization of gate signals
  • Full reference design files available for download
  • Available for purchase
Product shot of the Gate Driver Board for 3rd Generation (C3M™) SiC MOSFETs

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support

Documents

12 Documents Available
Document Type
Document Name
Last Updated
User Guide
PRD-08391: CGD15SG00D2 Gate Driver for Wolfspeed’s Gen 3 SiC MOSFETs User Guide (PDF)
10/2024
Design Files
12/2024
Design Files
12/2024
Design Files
12/2024
Design Files
12/2024
Design Files
12/2024
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
01/2025
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
01/2023
White Papers
Designed to Last, Even in the Harshest Environments (PDF)
New
11/2025
White Papers
Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
11/2025
White Papers
SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
New
11/2025
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors (Link)
11/2024

Knowledge Center

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Automation in Action: How Teamwork at MVF is Powering Quality at Scale 

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SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach

Continue Reading  White Paper

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